UQ research team has developed perovskite-MOF glass composite material with improved optical properties and stability. This composite is manufactured using scalable and cost-effective solid-state processing techniques. Compared to pure metal halide perovskite, UQ’s composite exhibits orders of magnitude brighter photoluminescence, with a high quantum yield and enhanced light emission. The material demonstrates exceptional stability, maintaining photoluminescence for over 10,000 hours underwater and more than two years in ambient temperatures. Additionally, the composite is resistant to heat, organic solvents, and mechanical stress, and it stabilises in a functionally favourable crystal phase. These properties make it suitable for practical applications in photocatalysis and white light-emitting diodes (LEDs). Our technology addresses significant barriers faced by metal halide perovskites, such as polymorphism, stability, heavy metal leaching, and deep trap electronic states. The composite material also provides in situ heavy metal sequestration, further enhancing its practical utility. This innovation is protected by national phase patents and is available for licensing, investment, and collaborative research opportunities.

Our group is in the process of developing　a display that excites fluorescent materials with ultraviolet (UV) μLED to obtain full colors. At the same time, we have examined the application of three types of visible LEDs (i.e., red, green, and blue). We have used Al x In y Ga 1-x-y N-based materials to prepare red, green, and blue (RGB) μLEDs and conducted comparative evaluations of their electrical characteristics with that of UV μLEDs. The result showed that, for a size of 24 μm × 48 μm, the external quantum efficiency (EQE) of the red μLED at the current density of 25 [A/cm 2 ] was 2.0%. Moreover, for a size of 12 μm × 24 μm, the EQE of the green μLED at the same current density was 17.6%, while that of the blue and UV were 23.2% and 21.5%, respectively. Compared to UV μLEDs, not only the miniaturization of red μLEDs is more difficult, but EQE is significantly inferior, the drive voltage differs depending on the emission color, and electrical characteristics vary widely. In addition, since the wavelength shift due to current dependence is large, it was confirmed that there are many problems to be solved for display.

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Micro LED technology is revolutionizing the display industry with its exceptional brightness, energy efficiency, and scalability. This presentation explores the Micro LED driver IC technologies behind Micro LED advancements and their integration into diverse applications, including automotive displays, transparent displays, and large-scale installations. By addressing key challenges such as miniature circuitry, mass transfer, and cost-effectiveness, we highlight the possible innovations enabling Micro LED to meet the demands of various industries. Join us as we delve into how Micro LED is shaping the future of display technology, offering unparalleled performance and unlocking new possibilities across applications.

Micro-LED is known as the best display technology for the next generation displays, however real commercialization has been repeatedly delayed due to lack of advanced process technologies. Besides the mass transfer, RGB integration and enhancing efficiency of the small LED die appears more critical to be resolved. The biggest hurdle for RGB integration is making small red LED die having comparable efficiency to the blue and green. AlGaInP native red, quantum dot, and InGaN reds have been widely attempted. While AlGaInP red appears to be a strong contender, however, fatal disadvantage is an outrageously low efficiency due to sidewall defects formed by mesa dry etching, thus, defect-free mesa etching technology has been highly sought. Recently, we have achieved a crucial breakthrough in developing mesa etching of the AlGaInP native red micro-LED by “defect-free” wet chemical etching. In the past most of the efforts have been focused on the post dry etching recovery, However, they are helpful for partial recovery only. More importantly, they are not effective for the small die because sidewall defect penetration depth is close to or excess of the micro-LED die. According to our cathodoluminescence results, the sidewall defect penetration depth of the dry etched micro-LED is more than 7 m, while it is less than 0.2 m for the wet etched micro-LED. Thus, effective mesa area of the dry etched red micro-LED is only 28% of the wet etched, which implies that almost no or negligible number of defects exist in the wet etched red micro-LED. Further, our wet etching is capable to etch thicker than 6 m AlGaInP epi layers with etch rate similar to dry etching. In particular, it is one-step etching for any combination of binary, trinary, and quaternary compound semiconductor alloys without need for multiple photo-lithography processes. The chip sidewall is highly vertical and anisotropic; thus, no undercuts are observed after mesa etching. Both defect-free etching and promising etch profile results indicate that our wet etching technology is ready to apply for mass production process for mesa etching of the phosphide-base native red micro-LEDs.

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The present work describes a method for the RGB handling and the electrical bonding of Micro-LED arranged onto a host substrate emulating a display. The assembly technology will be presented which relies on a three-step sequential soldering for RGB-connecting of several thousands of small-sized (ca. 20x20 µm) LED mechanical chips mimicking "RGB" source LEDs to a large substrate in a 150x150 matrix array, leading to a 99.5% success rate at R&D scale.

Despite their promise, microLED displays have yet to achieve mass commercialization, with yield improvement being a critical hurdle. Effective testing is essential to overcoming this challenge. This talk will explore the two major functional testing methodologies—photoluminescence (PL) and electroluminescence (EL)—and demonstrate why EL is the superior approach for accurate defect detection and performance assessment. We will discuss the key advantages of EL testing and examine what the industry needs in order to adopt this methodology at scale, ultimately driving microLED technology toward widespread adoption.

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Quantum Dot (QD) materials are emerging as promising candidates for color conversion in MicroLED displays, offering significant advantages over traditional RGB emitting backplanes. The Fraunhofer IAP has developed exceptionally stable QDs with enhanced properties, including high quantum efficiencies under blue illuminance and improved solubility for ink formulation. These advancements are crucial for the practical application of QDs in display technology. Furthermore, the talk will showcase the application of EHD-Jet printing techniques to achieve high-resolution printing of 10 µm and less, even on multi-nozzle systems. This demonstration paves the way for future up-scaling to industrial processes, potentially revolutionizing the manufacturing of MicroLED displays.

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The evolution of MicroDisplay technology is driving a new era of smart glasses, ranging from information-focused wearables to fully immersive Augmented Reality (AR) solutions. This talk will explore the role of passive Microdisplay in applications that require minimal yet effective visual overlays—such as displaying real-time stats, GPS navigation, health tracking, and sports performance metrics—while also examining the breakthrough potential of high-resolution self-aligned MicroDisplay for ultimate
AR experiences. For information-driven glasses, power efficiency and clarity are paramount. Passive Microdisplay provides a low-power, high-contrast solution for delivering critical information without unnecessary visual clutter, ensuring extended usability and seamless integration into everyday wearables. These displays are ideal for applications like navigation assistance, fitness tracking, and enterprise data visualization, where discreet yet effective data presentation enhances user experience. On the other end of the spectrum, achieving truly immersive AR experiences requires a leap in display technology. By leveraging a high-resolution, self-aligned manufacturing process, CMOS based MicroDisplay solutions enable ultra-compact form factors while
delivering exceptional brightness, contrast, and image clarity. These advanced displays bridge the gap between digital and physical environments, ensuring a natural and interactive experience suitable for next-generation AR applications.
This discussion highlights the necessity of tailored MicroDisplay solutions, demonstrating how passive MicroDisplay can optimize power and functionality for lightweight information glasses, while high-resolution self-aligned MicroDisplay drive the future of
AR immersion. Attendees will gain insight into the latest technological advancements, industry trends, and the strategic development of displays that align with the evolving needs of wearable and AR technology.

Thin film emitters in the form of microleds had great promise but could not deliver due to challenges in solving the mass transfer problem. TPR’s nano emitter technology does not need mass transfer. TPR will present both monochrome and full visual spectrum devices with enhanced EQE are presented with the projected fabrication process.

The next-generation displays built on nitride-micro-LEDs aim to provide high brightness and resolution covering a large display area. They therefore require driving transistors in their active-matrix arrays capable of delivering a high current density within a limited footprint and can be fabricated cost-effectively over a large-area substrate. We show that ordered defect compound semiconductor CuIn 5 Se 8 , which forms regular defect complexes with defect-pair compensation, can simultaneously achieve high performance and scalable solution processability. After printing from their molecular precursors which decompose after a low temperature (370 o C) annealing, the uniform thin films of CuIn 5 Se 8 can be incorporated as the semiconductor channel of thin-film transistors, exhibiting defect-tolerant, band-like electron transport supplying an output current above 35 microamperes per micrometer, with a large on/off ratio greater than 10 6 , a small subthreshold swing of 189 ± 21 millivolts per decade, and a high field-effect mobility of 58 ± 10 square centimeters per volt per second, with excellent device uniformity and stability, superior to devices built on its less defective parent compound CuInSe 2 , analogous binary compound In 2 Se 3 , and other solution-deposited semiconductors. CuIn 5 Se 8 transistors can be monolithically integrated with carbon nanotube transistors to form high-speed and low-voltage three-dimensional complementary logic circuits with a short stage delay of 75 ns under a low supply voltage of 6 V. They can also be fabricated directly on top of GaN micro- LED arrays under a low thermal budget. Their high performance allows them to drive these micro-LEDs to a high current density above 200 amperes per square centimeter and realize high-resolution active-matrix displays with pixels per inch greater than 500.

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